کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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740180 | 1461929 | 2010 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: A planar thermoelectric power generator for integration in wearable microsystems A planar thermoelectric power generator for integration in wearable microsystems](/preview/png/740180.png)
A technique for IC-compatible fabrication of a planar (in-plane) thermoelectric (TE) power generator using a thermopile composed of n-type bismuth telluride (Bi2Te3) and p-type antimony telluride (Sb2Te3) thin-films is presented. The research demonstrates that the thermal co-evaporation of bismuth/antimony (Bi/Sb) and telluride (Te) is the most suitable deposition technique. The measurements showed TE performance properties of the deposited thin-films that are comparable to those reported for the same materials in the bulk form. The measurements showed absolute values of the Seebeck coefficient in the range 91–248 μV K−1, an electrical resistivity in the 7.6–39.1 μΩ m range and a thermal conduction between 1.3 and 1.8 W m−1 K−1. The best resulting figures-of-merit, ZT, at room temperatures were 0.97 and 0.56 (equivalent to power-factors, PF, of 4.87 × 10−3 and 2.8 × 10−3 W K−1 m−2) for the Bi2Te3 and Sb2Te3 thin-films, respectively. The IC-compatibility and the dependence of the TE performance on technological details, such as photolithography and wet etching used for patterning the thin-films have also been investigated. The converter dimensions for best performance were analysed and a prototype of a planar TE power generator was fabricated.
Journal: Sensors and Actuators A: Physical - Volume 161, Issues 1–2, June 2010, Pages 199–204