کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
740287 1462104 2013 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Humidity sensing properties of a single Sb doped SnO2 nanowire field effect transistor
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی آنالیزی یا شیمی تجزیه
پیش نمایش صفحه اول مقاله
Humidity sensing properties of a single Sb doped SnO2 nanowire field effect transistor
چکیده انگلیسی

This work reports the humidity dependent properties of a single Sb doped SnO2 nanowire field effect transistor (NWFET). The NWFET is fabricated by a lithography method on a highly doped silicon substrate as back gate covered by oxide as gate dielectric. The electric properties of the device under different relative humidities (RHs) at room temperature are investigated. The NWFET exhibits a field effect mobility of 108.7 cm2/(V s), a subthreshold swing of 70 mV/decade, and a drain current on/off ratio of 106. The threshold voltage shifts from −11.2 V to −14.6 V as RH increases from 22% to 40%. The NWFET exhibits sensitive behaviors to the humidity, which is promising for the application in humidity sensors.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators B: Chemical - Volume 186, September 2013, Pages 78–83
نویسندگان
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