کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
740890 894201 2010 17 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Advances of SiC-based MOS capacitor hydrogen sensors for harsh environment applications
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی آنالیزی یا شیمی تجزیه
پیش نمایش صفحه اول مقاله
Advances of SiC-based MOS capacitor hydrogen sensors for harsh environment applications
چکیده انگلیسی

SiC-based hydrogen sensors have attracted much attention due to applications in harsh environments. In this paper, harsh environment is defined. Characteristics of SiC-based hydrogen sensors for harsh environment applications are reviewed. Various types of SiC-based field effect hydrogen sensor in terms of their respective history, structure, advantages and disadvantages have been discussed. SiC-based MOS capacitor hydrogen sensor will be conferred in detail. The reasons for selecting SiC in fabricating MOS capacitor hydrogen sensor for harsh environment applications are elucidated. Different hydrogen sensing mechanisms depend on the temperatures and the conditions of catalytic metal layer are highlighted. MOS capacitor SiC-based sensors fabricated by previous research groups are listed. Each catalytic electrodes and oxide layers selected have their significant properties. Examples of nanostructured materials that have been used in forming oxide layer are illustrated. The future challenges in terms of material (metal electrodes and oxide layers) properties and surface properties of materials are described. It is concluded that MOS capacitor SiC-based hydrogen sensors promote green technology.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators B: Chemical - Volume 151, Issue 1, 26 November 2010, Pages 39–55
نویسندگان
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