کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
741120 | 894227 | 2008 | 5 صفحه PDF | دانلود رایگان |
We report novel p-type behaviour of undoped SnO2 thin films irradiated with a 75 MeV Ni+ ion beam. Gas response of the irradiated films to NH3 (reducing) and NO2 (oxidizing) gases shows an increase and decrease in resistance, respectively, indicating p-type conduction that also increases with an increase in ion fluence. Photoluminescence spectroscopy of the irradiated films shows a strong yellow peak corresponding to interstitial oxygen ions. The observed p-type conductivity is attributed to the holes generated by these interstitial oxygen ions. The presence of interstitial oxygen ions is also confirmed by X-ray photoelectron spectroscopy. The conduction activation energy decreases with increasing the ion fluence, indicating an increase in hole density that supports the gas sensing and photoluminescence results.
Journal: Sensors and Actuators B: Chemical - Volume 135, Issue 1, 10 December 2008, Pages 35–39