کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
741751 | 894263 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Response transients in a Pd-Ni/AlN/n-Si hydrogen sensor
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی آنالیزی یا شیمی تجزیه
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The response transient from Pd and Pd-Ni alloy gated MIS hydrogen sensors with AlN as the insulating layer is investigated. Often we observe two distinct components of the transient response after switching on (or off) the hydrogen. On turn on, the initial rise of the response is followed by an overshoot which then slowly decays to the final steady state signal. We call the combination of the overshoot with this latter decay, the reverse transient. Some of our data also show a symmetric transient after hydrogen turn off. This paper presents results of a study of reverse transients observed in our devices. The temperature dependence of these reverse transient decay rates allows the estimate of the corresponding activation energies as 90Â kJ/mol and 110Â kJ/mol, respectively, for Pd and Pd-Ni gated devices. The closeness of these values suggests that the underlying mechanism is independent of the nature of the gate. A possible mechanism might be associated with the redistribution of low mobility negative charges within the AlN.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators B: Chemical - Volume 123, Issue 1, 10 April 2007, Pages 277-282
Journal: Sensors and Actuators B: Chemical - Volume 123, Issue 1, 10 April 2007, Pages 277-282
نویسندگان
Linfeng Zhang, Erik F. McCullen, Haripriya E. Prakasam, Jagdish Takur, Ratna Naik, Gregory W. Auner, K.Y. Simon Ng,