کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
745126 | 1462128 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
C2H4O sensing properties for thick film sensor using La2O3-modified SnO2
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی آنالیزی یا شیمی تجزیه
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Doping SnO2 with Sb was investigated in relation with sensitization of a SnO2-based thick film sensor for C2H4O gas. With Sb doping by 0.05 or 0.1 at.%, the electrical resistances of films lowered drastically, suggesting an optimum Sb doping of about 0.1 at.%. A series of Sb (0.1 at.%)-doped devices with various La2O3 loadings up to 7 wt.% was subjected to measurements of the electrical resistances in air and the sensor response to C2H4O. The highest sensor response to C2H4O at 250 and 300 °C was attained at a loading of 5 wt.%, while the sensor response at 350 °C showed no great difference in between 1 and 7 wt.% loading. The optimal doping and loading amounts were discussed by the basis on the results of SEM observation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators B: Chemical - Volume 118, Issues 1–2, 25 October 2006, Pages 171–176
Journal: Sensors and Actuators B: Chemical - Volume 118, Issues 1–2, 25 October 2006, Pages 171–176
نویسندگان
Masahiro Kugishima, Kengo Shimanoe, Noboru Yamazoe,