کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
745445 1462118 2012 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
High gain ISFET based νMOS chemical inverter
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی آنالیزی یا شیمی تجزیه
پیش نمایش صفحه اول مقاله
High gain ISFET based νMOS chemical inverter
چکیده انگلیسی

For ion sensitive field effect transistors (ISFETs) built using a standard CMOS process, it is possible for more than one device to share the same ion sensitive membrane (passivation layer). Using floating gate MOS concepts, a complementary pair of ISFETs (n and p devices) can share the same ion sensitive membrane forming an ISFET based chemical switch. It is shown here that, using FG-ISFET and Neuron MOS concepts, a second electrical input may be capacitively coupled to their floating gate.Through properly sizing this coupling capacitor, it is possible to enhance pH sensitivity referred to its input more than a hundredfold. This forms an ISFET based νMOS chemical inverter with enhanced input referred sensitivity. This circuit was simulated, built, and tested. Its switching threshold voltage; referred to reference electrode, shifted by 31.26 mV per pH. This was increased to 3.7 V/pH when referred to the second electrical input. This is the highest ever reported chemical signal amplification for such a minimum component ISFET circuit.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators B: Chemical - Volumes 171–172, August–September 2012, Pages 110–117
نویسندگان
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