Transient transverse electrical field induced by selective adsorbtion on low gap semiconducting thin films

Different types of non-thermal thin film growth effects have been recently identified which involve some excitation processes of the electronic structures. Especially those concerning the activation of electrons of atomic and molecular electronic shells belonging to the free condensing particles in the plasma gas phase, and also belonging to the electronic bands and orbitals of the thin solid film materials after the condensation process. Among them, those produced by some surface chemical recombination processes which occur during the growth of amorphous carbon films (hydrogenated diamond like carbon and polycrystalline diamond), which affect the atomic rearrangement during the growth of various types of film materials. We propose in this paper the identification of some new surface polarisation mechanisms, which can be selectively, produced with the adsorbtion of molecules at the surface of low gap semiconducting films which can be compared to polymeric amorphous carbon. During the adsorbtion process, the adsorbtion energy before producing heat, can under specific circumstances activate the electronic bands and induce a transient transverse electric field. For this description, we have used semiconducting organic film materials of different optical gaps. These activation effects are expected to occur during adsorbtion processes, only when the adsorption energies of the particles condensing on the film surface, will be similar to the electronic gap energy. We suggest, that these effects could have a role not only in various atomic rearrangement process during the growth of many types of film materials, but also in some biological processes such as olfaction and cell membrane metabolisms.