کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
749964 | 894866 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ultra high performance planar InGaAs PIN photodiodes for high speed optical fiber communication
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper reports a front-illuminated planar InGaAs PIN photodiode with very low dark current, very low capacitance and very high responsivity on S-doped InP substrate. The presented device which has a thick absorption layer of 2.92 μm and a photosensitive area 73 μm in diameter exhibited the high performance of a very low capacitance of 0.47 pF, a very low dark current of 0.041 nA, a very high responsivity of 0.99 A/W (79% quantum efficiency) at λ = 1.55 μm, the 3 dB bandwidths of 6.89 GHz (−5 V), 7.48 GHz (−12 V) for bare chips and 4.48 GHz (−5 V), 5.02 GHz (−12 V) for the devices packaged in TO can, respectively. Furthermore, the developed PIN photodiodes possess high breakdown voltage of less than −25 V.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 133, Issue 1, 8 January 2007, Pages 9–12
Journal: Sensors and Actuators A: Physical - Volume 133, Issue 1, 8 January 2007, Pages 9–12
نویسندگان
Shiuan-Ho Chang, Yean-Kuen Fang, Shyh-Fann Ting, Shih-Fang Chen, Chun-Yue Lin, Cheng-Yi Wu,