Fabrication and characteristics of the suppressed sidewall injection magnetotransistor using a CMOS process

A novel suppressed sidewall injection magnetotransistor has been fabricated on the Hynix 0.6 μm standard CMOS technology and experimentally verified. The novel device overcomes the restriction of the standard CMOS technology and achieves high linear characteristics. Experimental results show that the variation of the collector current is extremely linear as a function of the magnetic field at IB = 500 μA, VCE = 2 V and VSE = 5 V. The relative sensitivity shows up to 120% T−1. The measured non-linearity of the fabricated device is about 1.4%.We also propose a two-dimensional suppressed sidewall injection magnetotransistor. Two components of magnetic field applied to the horizontal direction of the chip can be measured simultaneously in the device. The device exhibits extremely linear characteristics to the magnetic field on both components. The measured non-linearity of the fabricated device is about 1.2%.