Synthesis and luminescence properties of novel Ce3+-doped Yb3Al5-xGaxO12 garnets with very fast decay time

With the increase of the Ga3+ ionic concentration, the diffraction peaks of the 0.5 at%Ce:Yb3Al5-xGaxO12 (x = 0, 1, 2, 3, 4, 5)garnets exhibit slight shift towards the left, and the main reason causing this phenomena is that the Ga3+ ionic radius is larger than the Al3+ ionic radius. From the picture, we speculated that the absorption band edge of 250-270 nm was mainly caused by the charge transfer luminescence of Yb3+.195