کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
784003 1465049 2010 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Deformation mechanisms in composite nano-layered metallic and nanowire structures
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی مکانیک
پیش نمایش صفحه اول مقاله
Deformation mechanisms in composite nano-layered metallic and nanowire structures
چکیده انگلیسی

Using molecular dynamics simulations, the deformation behavior of two types of nanocomposite metallic materials (nano-layered thin films and composite nanowires) is investigated and compared with that of the bulk materials. The first structure is a hybrid nano-layered metallic composite formed by alternating layers of Cu, Ni, Cu, and Nb layers. The nanocomposite has a pre-existing dislocation structure inside it, generated by initially loading a perfect structure to a high strain to nucleate dislocations, then completely unloading it, and loading it again. Four different structures are considered all having the same Cu and Ni layers thickness and varying Nb thickness. Comparison of the deformation behavior between the different structures revealed that the addition of Nb layer makes the material stronger. However, this behavior has a critical limit below which the strength of the material decreases. This is attributed to the extended shearing of the interface that results from the accumulation of dislocations in the Cu/Nb interface. The second structure discussed is a composite nanowire made of a Ni layer sandwiched between two Cu layers. We show that the natural development of coherency stresses at the interfaces between the two layers increases the ability of the wire to deform by a twinning process under tensile loading. This process results in the reorientation of the composite nanowire that, under unloading, forces the nanowire to completely recover the straining, leading to a pronounced pseudoelastic behavior.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Mechanical Sciences - Volume 52, Issue 2, February 2010, Pages 295–302
نویسندگان
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