Edge chipping of silicon wafers in diamond grinding

Although diamond grinding is the most commonly used machining technique in silicon wafer thinning, it often induces edge chipping which leads to wafer breakage. This study investigates edge chipping of silicon wafer in diamond grinding. The study correlates edge chipping with the crystallographic orientation and thickness of a silicon wafer, as well as grinding process conditions, such as wheel grit size, grinding mode and feed rate. It identifies edge chipping in terms of critical thickness, geometry and dimensions. The study discusses the mechanisms of edge chipping based on machining mechanics and energy theories. Conclusions are drawn to summarize the study.

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► Experiments is conducted to study edge chipping of Si wafer in diamond grinding.
► Chipping profile in 〈100〉 is isosceles right triangle, but rectabular in 〈110〉.
► Chipping size is independent on the crystal orientation and wafer edge location.
► Grain size, down-feedrate and wafer thickness have major effects on chipping size.
► Mechanisms of chipping is analyzed based on mechanics and energy theories.