Grinding of silicon wafers using an ultrafine diamond wheel of a hybrid bond material

An ultrafine diamond wheel of a mesh size of 12,000 was fabricated by using a hybrid bond material, which consists of silicon carbide, silica and alumina. The employment of the newly developed wheel enabled excellent performance during grinding of silicon wafers. An extremely smooth surface of an average roughness of 0.6 nm was achieved. TEM examinations showed that the total thickness of the defected layer was less than 60 nm.