کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
804247 1467825 2008 29 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Modeling of failure and lifetime of thin-film metal conductors in integrated circuits
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی مکانیک
پیش نمایش صفحه اول مقاله
Modeling of failure and lifetime of thin-film metal conductors in integrated circuits
چکیده انگلیسی
We also put forward an approach to modeling the electromigration and mechanical stresses in conductors containing impurities, such as copper. For the first time a model is proposed for calculating the effective charge of vacancies (ions), which is the major electromigration parameter, in grain boundaries of polycrystalline conductor structure. The dependence of effective charges of aluminum and copper ions in aluminum grain boundary on temperature and boundary texture is simulated numerically.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physical Mesomechanics - Volume 11, Issues 3–4, May–August 2008, Pages 158-186
نویسندگان
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