کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8145147 | 1524068 | 2018 | 19 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of Ge35In8S57 amorphous films for optical applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک اتمی و مولکولی و اپتیک
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چکیده انگلیسی
Thin films of In-doped Ge-S in the form of Ge35In8S57 with different film thickness were deposited using an evaporation method. The X-ray diffraction studies demonstrate that the as-prepared films are amorphous in nature for these films. Some optical constants were calculated at a thickness of 150, 300, 450 and 900â¯nm and annealing temperature of 373, 413, 437 and 513â¯K. Our optical observations show that the mechanism of the optical transition obeys the indirect transition. It was found that the energy gap, Eg, decreases from 2.44 to 2.20â¯eV with expanding the thickness of the film from 150 to 900â¯nm. On the other hand, it was found that Eg increases with annealing temperature from 373 to 513â¯K. The increment in the band gap can be attributed to the gradual annealing out of the unsaturated bonds delivering a decreasing the density of localized states in the band structure. Using the single oscillator model, the dispersion of the refractive index is described. The dispersion constants of these films were calculated with different both thickness and annealing temperatures. Additionally, both of nonlinear susceptibility, Ï(3) and nonlinear refractive index, n2 were calculated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Chinese Journal of Physics - Volume 56, Issue 1, February 2018, Pages 212-220
Journal: Chinese Journal of Physics - Volume 56, Issue 1, February 2018, Pages 212-220
نویسندگان
M. Rashad, A.A.A. Darwish, Said A. Farha Al-Said, A.A. Hendi, M.M. Hafiz,