کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8145646 1524095 2018 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Properties of the surface generation-recombination noise in 1.94 µm GaSb-based laser diodes
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
Properties of the surface generation-recombination noise in 1.94 µm GaSb-based laser diodes
چکیده انگلیسی
A detail investigation of generation-recombination (g-r) noise in 1.94 µm GaSb-based type-I ridge waveguide laser diodes (LDs) has been performed in a temperature range (230-295) K. Lorentzian-type noise spectra have been observed in the current range below the threshold at the forward and reverse biases of the LDs with the same characteristic time (3.7 μs) and activation energy (≈0.37 eV) of charge carriers transitions associated with the g-r processes. An equivalent electrical circuit possessing the voltage noise source is presented, which allows the description of both the current-voltage characteristic and the voltage fluctuation spectral density of the laser diode. Results indicate that the origin of the g-r noise in the investigated samples is the surface recombination caused by the surface leakage current channel between n+GaSb and p+GaSb contacts, which is practically independent from the applied bias polarity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 91, June 2018, Pages 101-106
نویسندگان
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