کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8146096 | 1524099 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0â¯1â¯3) substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Metal-insulator-semiconductor (MIS) structures based on n(p)-Hg1-xCdxTe (xâ¯=â¯0.22-0.40) with near-surface variable-gap layers were grown by the molecular-beam epitaxy (MBE) technique on the Si (0â¯1â¯3) substrates. Electrical properties of MIS structures were investigated experimentally at various temperatures (9-77 K) and directions of voltage sweep. The “narrow swing” technique was used to determine the spectra of fast surface states with the exception of hysteresis effects. It is established that the density of fast surface states at the MCT/Al2O3 interface at a minimum does not exceed 3â¯Ãâ¯1010â¯eVâ1â¯Ãâ¯cmâ2. For MIS structures based on n-MCT/Si(0â¯1â¯3), the differential resistance of the space-charge region in strong inversion mode in the temperature range 50-90â¯K is limited by the Shockley-Read-Hall generation in the space-charge region.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 87, December 2017, Pages 129-133
Journal: Infrared Physics & Technology - Volume 87, December 2017, Pages 129-133
نویسندگان
A.V. Voitsekhovskii, S.N. Nesmelov, S.M. Dzyadukh, V.S. Varavin, S.A. Dvoretskii, N.N. Mikhailov, M.V. Yakushev, G.Yu. Sidorov,