P-InAsSbP/p-InAs0.88Sb0.12/n-InAs0.88Sb0.12/n+-InAs PDs with a smooth p-n junction

- Linear impurity distribution near the p-n junction.
- Low unit area capacity (Co/A)77 K = 4.3 × 10−8 F × cm−2).
- D4.7μm,300K∗ as high as 6.5 × 108 Jones.