کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8146165 | 1524108 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Mid-wavelength type II InAs/GaSb superlattice infrared focal plane arrays
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Mid-wavelength type II InAs/GaSb superlattice infrared focal plane arrays Mid-wavelength type II InAs/GaSb superlattice infrared focal plane arrays](/preview/png/8146165.png)
چکیده انگلیسی
We have demonstrated 384 Ã 288 pixels mid-wavelength infrared focal plane arrays (FPA) using type II InAs/GaSb superlattice (T2SL) photodetectors with pitch of 25 μm. Two p-i-n T2SL samples were grown by molecular beam epitaxy with both GaAs-like and InSb-like interface. The diode chips were realized by pixel isolation with both dry etching and wet etching method, and passivation with SiNx layer. The device one with 50% cutoff wavelength of 4.1 μm shows NETD â¼Â 18 mK from 77 K to 100 K. The NETD of the other device with 50% cutoff wavelength at 5.6 μm is 10 mK at 77 K. Finally, the T2SL FPA shows high quality imaging capability at the temperature ranging from 80 K to 100 K which demonstrates the devices' good temperature performance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 78, September 2016, Pages 263-267
Journal: Infrared Physics & Technology - Volume 78, September 2016, Pages 263-267
نویسندگان
Xuchang Zhou, Dongsheng Li, Jianliang Huang, Yanhua Zhang, Yingchun Mu, Wenquan Ma, Xiaoying Tie, Dafan Zuo,