Formation of native oxide crystallites on GaSe(0Â 0Â 1) surface

The process of GaSe native oxide formation was studied using atomic-force microscopy. It was found that the oxide film growth is accompanied by a work function increase. This increase saturates in several hours. The illumination by 1 mW laser at 650 nm stimulates the oxidation process. Continuous illumination changes the work function by 1 eV and that is 2 times higher than that without irradiation. It is supposed that the oxide formation occurs at edge dislocation lines.