کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8146901 1524115 2015 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Experimental investigation of the charge-layer doping level in InGaAs/InAlAs avalanche photodiodes
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
Experimental investigation of the charge-layer doping level in InGaAs/InAlAs avalanche photodiodes
چکیده انگلیسی
We report on the development of mesa-processed InGaAs/InAlAs avalanche photodiodes (APDs) for short-wave infrared (SWIR) applications with demand for high gain and low breakdown voltage. Devices are designed with separate absorption, grading, charge and multiplication (SAGCM) layers. Special attention has been paid to the charge layer in order to optimize the distribution of the electric field across the device. Since the device performance significantly changes for deviations of only several percent in the doping concentration a series with variation of the charge-layer doping level has been carried out. Band-edge profile calculations as well as electro-optical characterization results of the APDs will be discussed in this article. Our optimized APD structures reveal a low dark-current density of Id=1×10-4 A/cm2 at gain M=10 and a low breakdown voltage Vbd<30V. A maximum gain larger than 300 in the linear operation mode is demonstrated at room temperature as well as 140 K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 71, July 2015, Pages 298-302
نویسندگان
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