کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8152699 | 1524755 | 2018 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Magnetoelectronic properties of Vanadium impurities co-doped (Cd, Cr)Te compound for spintronic devices: First principles calculations and Monte Carlo simulation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Magnetoelectronic properties of Vanadium impurities co-doped (Cd, Cr)Te compound for spintronic devices: First principles calculations and Monte Carlo simulation Magnetoelectronic properties of Vanadium impurities co-doped (Cd, Cr)Te compound for spintronic devices: First principles calculations and Monte Carlo simulation](/preview/png/8152699.png)
چکیده انگلیسی
We have applied the first-principles calculations to investigate magnetoelectronic properties of Vanadium impurities co-doped (Cd, Cr)Te compound for spintronic devices. The ferromagnetic (FM) nature in (Cd, Cr)Te compound co-doped with V atoms has been found, and the mechanism responsible for this behavior has been considered to be the double exchange. Moreover, the Curie-temperature calculation reveals that the stability's field of the FM-phase rises with rising both the concentration of Cr and V atoms above ambient temperature. This system presents the half-metallic character where its polarization of spin is total at the Fermi level, and its total magnetic moment is principally induced by Cr and V elements. The spin-orbit coupling (SOC) typically play an important role in the electronic structure calculations due to both the concentration of Cr and V impurities. In addition to that, our results have been confirmed by the calculation of magnetization and susceptibility using the Monte Carlo simulation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 466, 15 November 2018, Pages 420-429
Journal: Journal of Magnetism and Magnetic Materials - Volume 466, 15 November 2018, Pages 420-429
نویسندگان
I. Bouziani, Y. Benhouria, I. Essaoudi, A. Ainane, R. Ahuja,