Tuning the magnetic properties of stripe domain structured CoFeB films using stack structure with spacer layer thickness dependent interlayer coupling

We report a novel approach for tuning the magnetic properties of stripe domain structured amorphous Co40Fe40B20 (CoFeB) films by using stack structured [CoFeB (100 nm)/Ta (z = 0-1.5 nm)]n = 0-4/CoFeB (100 nm) films with spacer layer thickness dependent interlayer coupling. All the as-deposited films deposited directly on thermally oxidized Si substrate at ambient temperature exhibit amorphous structure. Single-layer CoFeB (x = 100-300 nm) films display transcritical loops with high coercivity (HC > 4 kA/m) and large applied field required for magnetization saturation (HS > 40 kA/m) due to the formation of magnetic stripe domains induced by the stress quenched in during the preparation of the films at a high deposition rate to form amorphous structure. With increasing n, the number of CoFeB layers in stack structure increases providing an enhanced interlayer coupling and a better flux closure, which leads to a substantial drop in HC (∼1.8 kA/m) and changes the loop shape away from transcritical into soft magnetic type with reduced HS (∼10 kA/m) and increased remanence ratio (>75%). However, the improvement in magnetic properties strongly depends on the values of n and z. Temperature dependent M-H loops reveal a competition between interlayer coupling and interfacial strain, which provides unusual variation of HC(T), i.e., minimum in HC(T) vs T curve, depending on z and n. The observed results are explained on the basis of stress dependent stripe domains in single layer films and number of CoFeB layers and spacer layer thickness dependent interlayer coupling in stack structured films. It is revealed that the fabrication of stack of thick CoFeB films having stripe domains and separated by optimum z is an alternative approach to improve the magnetic properties of thick CoFeB films.