کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8156647 | 1524847 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Perpendicular magnetization of CoFeB on top of an amorphous buffer layer
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Perpendicular magnetization of CoFeB on top of an amorphous buffer layer Perpendicular magnetization of CoFeB on top of an amorphous buffer layer](/preview/png/8156647.png)
چکیده انگلیسی
Perpendicular magnetic anisotropy was observed in sputtered FeZr/CoFeB/MgO multilayers. A thin paramagnetic amorphous FeZr layer was used as a buffer layer and perpendicular anisotropy was obtained by annealing the samples without an external magnetic field. The critical CoFeB thickness for perpendicular anisotropy was 1.8Â nm; the anisotropy changes from out-of-plane to in-plane as the CoFeB thickness increases beyond this point. Perpendicular anisotropy was also enhanced when a Ta layer was capped on top of the MgO layer. The amorphous buffer provided better perpendicular anisotropy than previously reported Ta buffer, and it may be applied to perpendicular magnetization MRAM devices where good uniformity of tunnel junctions is required.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 374, 15 January 2015, Pages 350-353
Journal: Journal of Magnetism and Magnetic Materials - Volume 374, 15 January 2015, Pages 350-353
نویسندگان
Dongseok Kim, K.Y. Jung, Sungjung Joo, Youngjae Jang, Jinki Hong, B.C. Lee, C.Y. You, J.H. Cho, M.Y. Kim, K. Rhie,