| کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن | 
|---|---|---|---|---|
| 8156851 | 1524853 | 2014 | 6 صفحه PDF | دانلود رایگان | 
عنوان انگلیسی مقاله ISI
												Crossover of uniaxial magnetic anisotropy direction mediated by interfacial strain of CoFe2O4 films
												
											دانلود مقاله + سفارش ترجمه
													دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
																																												کلمات کلیدی
												
											موضوعات مرتبط
												
													مهندسی و علوم پایه
													فیزیک و نجوم
													فیزیک ماده چگال
												
											پیش نمایش صفحه اول مقاله
												 
												چکیده انگلیسی
												This study examined the deposition temperature-dependent magnetic anisotropy of CoFe2O4 films grown on Al2O3(0001) substrates using pulsed-laser deposition. X-ray diffraction revealed all films to have a ã111ã orientation except for the films grown at room temperature, which exhibited amorphous characteristics. Furthermore, the films deposited between 350 °C and 550 °C exhibited out-of-plane tensile strain even though, which was relieved as the deposition temperature increased. On the other hand, film deposited at 650 °C showed out-of-plane compressive strain. The in-plane and out-of-plane magnetic hysteresis loops, which were measured at room temperature, showed a decreased out-of-plane anisotropy when the deposition temperature was increased. Simple uniaxial magnetic anisotropy energy calculations based on the experimental data showed a direct correlation between the uniaxial magnetic anisotropy direction and stress of the films. X-ray photoelectron spectroscopy revealed variations in the cation distribution according to the deposition temperature.
											ناشر
												Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 368, November 2014, Pages 149-154
											Journal: Journal of Magnetism and Magnetic Materials - Volume 368, November 2014, Pages 149-154
نویسندگان
												C.-W. Cho, D.Y. Lee, J.S. Bae, S. Park,