کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8202995 | 1530502 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Vacancy-defect scattering in Ag(111)-supported silicene interface
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The role of vacancy-defect scattering in electron mobility near the two-dimensional (2D) Ag(111)-supported silicene sheet interface was investigated in this paper. The interface structures of Ag(111)-supported silicene and silicene-sheet charge density were considered. Mobility limited by the vacancy-defect scattering was calculated in the order of 102-105 cm2/Vâ
s, which was comparable with first-principle calculations and experimental results for free-standing and substrate-supported silicene. Results further showed the decay relationship between the electron mobility and vacancy density of silicene sheet. Furthermore, the influence of the Ag(111)-supported silicene sheet structure on electron mobility was confirmed through calculations. This study can contribute to the prediction of the electron mobility of other 2D graphene-like honeycomb-structure systems.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 382, Issue 38, 29 September 2018, Pages 2776-2780
Journal: Physics Letters A - Volume 382, Issue 38, 29 September 2018, Pages 2776-2780
نویسندگان
Yuefei Liu, Yanwu Lu,