کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8203913 | 1530531 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrically tunable magnetic configuration on vacancy-doped GaSe monolayer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrically tunable magnetic configuration on vacancy-doped GaSe monolayer Electrically tunable magnetic configuration on vacancy-doped GaSe monolayer](/preview/png/8203913.png)
چکیده انگلیسی
Group-IIIA metal-monochalcogenides with the enticing properties have attracted tremendous attention across various scientific disciplines. With the aim to satisfy the multiple demands of device applications, here we report a design framework on GaSe monolayer in an effort to tune the electronic and magnetic properties through a dual modulation of vacancy doping and electric field. A half-metallicity with a 100% spin polarization is generated in a Ga vacancy doped GaSe monolayer due to the nonbonding 4p electronic orbital of the surrounding Se atoms. The stability of magnetic moment is found to be determined by the direction of applied electric field. A switchable magnetic configuration in Ga vacancy doped GaSe monolayer is achieved under a critical electric field of 0.6 V/Ã
. Electric field induces redistribution of the electronic states. Finally, charge transfers are found to be responsible for the controllable magnetic structure in this system. The magnetic modulation on GaSe monolayer in this work offers some references for the design and fabrication of tunable two-dimensional spintronic device.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 382, Issue 9, 9 March 2018, Pages 667-672
Journal: Physics Letters A - Volume 382, Issue 9, 9 March 2018, Pages 667-672
نویسندگان
Weiqing Tang, Congming Ke, Mingming Fu, Yaping Wu, Chunmiao Zhang, Wei Lin, Shiqiang Lu, Zhiming Wu, Weihuang Yang, Junyong Kang,