Ternary effects on the optical interface phonons in onion-like GaN/AlxGa1 − xN quantum dots

The interface optical phonons and its ternary effects in onion-like quantum dots are studied by using dielectric continuum model and the modified random-element isodisplacement model. The dispersion relations, the electron-phonon interactions and ternary effects on the interface optical phonons are calculated in the GaN/AlxGa1 − xN onion-like quantum dots. The results show that aluminium concentration has important influence on the interface optical phonons and electron-phonon interactions in GaN/AlxGa1 − xN onion-like quantum dots. The frequencies of interface optical phonons and electron-phonon coupling strengths change linearly with increase of aluminium concentration in high frequency range, and do not change linearly with increasing aluminium concentration in low frequency range.