کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8207988 | 1531900 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synchrotron studies of top-down grown silicon nanowires
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Synchrotron studies of top-down grown silicon nanowires Synchrotron studies of top-down grown silicon nanowires](/preview/png/8207988.png)
چکیده انگلیسی
Morphology of the top-down grown silicon nanowires obtained by metal-assisted wet-chemical approach on silicon substrates with different resistance were studied by scanning electron microscopy. Obtained arrays of compact grown Si nanowires were a subject for the high resolution electronic structures studies by X-ray absorption near edge structure technique performed with the usage of high intensity synchrotron radiation of the SRC storage ring of the University of Wisconsin-Madison. The different oxidation rates were found by investigation of silicon atoms local surrounding specificity of the highly developed surface and near surface layer that is not exceeded 70â¯nm. Flexibility of the wires arrays surface morphology and its composition is demonstrated allowing smoothly form necessary surface oxidation rate and using Si nanowires as a useful matrixes for a wide range of further functionalization.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Results in Physics - Volume 9, June 2018, Pages 1494-1496
Journal: Results in Physics - Volume 9, June 2018, Pages 1494-1496
نویسندگان
S.Yu. Turishchev, E.V. Parinova, D.N. Nesterov, D.A. Koyuda, V. Sivakov, A. Schleusener, V.A. Terekhov,