کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8208125 | 1531900 | 2018 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical properties of InAs/GaAs quantum dot superlattice structures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
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چکیده انگلیسی
Quantum dot (QD) structure has potential applications in modern highly efficient optoelectronic devices due to their band-tuning. The device dimensions have been miniatured with increased efficiencies by virtue of this discovery. In this research, we have presented modified analytical and simulation results of InAs/GaAs QD superlattice (QDSL). We have applied tight binding model for the investigation of ground state energies using timeindependent Schrödinger equation (SE) with effective mass approximation. It has been investigated that the electron energies are confined due to wave function delocalization in closely coupled QD structures. The minimum ground state energy can be obtained by increasing the periodicity and decreasing the barrier layer thickness. We have calculated electronics and optical properties which includes ground state energies, transition energies, density of states (DOS), absorption coefficient and refractive index, which can be tuned by structure modification. In our results, the minimum ground state energy of QDSL is achieved to be 0.25â¯eV with a maximum period of 10 QDs. The minimum band to band and band to continuum transition energies are 63â¯meV and 130â¯meV with 2â¯nm barrier layer thickness respectively. The absorption coefficient of our proposed QDSL model is found to be maximum 1.2â¯Ãâ¯104â¯cmâ1 and can be used for highly sensitive infrared detector and high efficiency solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Results in Physics - Volume 9, June 2018, Pages 297-302
Journal: Results in Physics - Volume 9, June 2018, Pages 297-302
نویسندگان
Ali Imran, Jianliang Jiang, Deborah Eric, M. Noaman Zahid, M. Yousaf, Z.H. Shah,