کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8208322 | 1531901 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication and micromagnetic modeling of barium hexaferrite thin films by RF magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
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چکیده انگلیسی
The synthesis and characterization of thin M-type barium hexaferrite (BaFe12O19 or BaM) films on silicon are reported. Multilayer in situ technique was employed to anneal the films at 850-900â¯Â°C for 10â¯min. The thickness dependence of the magnetic properties of the BaM films has been investigated using VSM. For the BaM 150â¯nm thickness film, acicular BaM grains were present having their c-axis randomly oriented. For the BaM films thicker than 150â¯nm, lattice relaxation favors the c-axis to be aligned in the film plane. The micromagnetic simulation was used to model the out-of-plane and the in-plane hysteresis loops. We have achieved good matching between the experimental data and the model. Using the micromagnetic model, we have estimated the deflection angle of c-axis from the normal plane θâ¯=â¯25° for the 150â¯nm thick film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Results in Physics - Volume 8, March 2018, Pages 587-591
Journal: Results in Physics - Volume 8, March 2018, Pages 587-591
نویسندگان
Alaaedeen R. Abuzir, Saed A. Salman,