The effects of the SiOSi segment presence in BAPP/BPDA polyimide system on morphology and hardness properties for opto-electronic application

• SiOSi segment was placed into the backbone and matrix of polyimide separately.
• Bis-AminophenoxyPhenyl-Propane/4,4′-Biphthalic dianhydride was utilized as polyimide.
• SiOSi was found to control the morphology, hardness and opto-electronic properties.

Recent technological advances demanded incorporation of SiOSi segment into polyimides (PI)s to improve versatility in terms of processing, morphology and optoelectronic properties. In order to study the role of SiOSi segment in the morphology and hardness properties of PI, the SiOSi segment have been introduced into the PI backbone through the conventional copolymerization and in PI matrix through sol gel method. The PI series were characterized by Fourier transform infra-red (FT-IR), nuclear magnetic resonance (NMR) spectroscopy, elemental analysis, solution viscosity and gel permeation chromatography (GPC). Scanning electron microscope (SEM) analysis suggested a microphase separation between the two components. FT-IR spectra confirmed the presence of silicone segment, as well as a complete imidization of PI series. Micrograph suggested a homogeneous phase between the PI and silicone segment for copolymerization series while sol gel technique revealed the inorganic particles were distributed homogenously in PI matrix. It was also found that the presence SiOSi segment in PI backbone and PI matrix influenced the opto-electronic properties.

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