کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
844943 | 908636 | 2006 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Degenerate semiconductor device equations with temperature effect
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی (عمومی)
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چکیده انگلیسی
In this paper, we establish an existence assertion for the following elliptic system:-div(a(v)∇n-a(v)n∇ψ)=0 in Ω,-div(a(v)∇p+a(v)p∇ψ)=0 in Ω,-div(a(v)∇ψ)=p-n+f in Ω,-div(a(v)∇v)=a(v)|∇ψ|2 in Ωcoupled with suitable boundary conditions. This problem arises from the study of semiconductor devices with temperature effect and without recombination. We only assume that a is continuous and positive. This gives rise to the possibility that the system may be degenerate and/or singular. We show that, if a(s)a(s) does not go to zero too fast as s→∞s→∞, there exists a bounded weak solution, and therefore neither degeneracy nor singularity really occur. This also immediately implies some additional regularity properties for the weak solution.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nonlinear Analysis: Theory, Methods & Applications - Volume 65, Issue 2, 15 July 2006, Pages 321–337
Journal: Nonlinear Analysis: Theory, Methods & Applications - Volume 65, Issue 2, 15 July 2006, Pages 321–337
نویسندگان
Xiaoqin Wu, Xiangsheng Xu,