|کد مقاله||کد نشریه||سال انتشار||مقاله انگلیسی||ترجمه فارسی||نسخه تمام متن|
|853620||1470685||2016||4 صفحه PDF||سفارش دهید||دانلود رایگان|
We report on the formation mechanism of BaSi2 thin film on Si substrate grown by vacuum evaporation using BaSi2 granules as source materials. Since the vapor flux at the initial stage of evaporation is known to be Ba-rich, Si supply from the substrate is of crucial importance to obtain homogeneous BaSi2 thin film. In fact, low substrate temperature and/or thick film deposition led to formation of rough film with voids, and the oxidation proceeded upon exposure to air. We revealed that appropriate choice of substrate temperature, film thickness, and post-growth in-situ annealing can provide enough diffusion of Si and Ba, leading to realization of homogeneous BaSi2 thin film.
Journal: Procedia Engineering - Volume 141, 2016, Pages 23-26