ILT Approach for Compensating 3-D Mask Effects

As mask features scale to smaller dimensions, the so-called “3-D mask effects” which have mostly been neglected before, become important. This paper properly models the 3-D thick mask effects, and then analyses the object-based inverse lithography technique using a simulated annealing algorithm to determine the mask shapes that produce the desired on-wafer results. Evaluations against rigorous simulations show that the synthesized masks provide good image fidelity up to 0.94, and this approach gives improved accuracy and faster results than existing methods.