P-type β-gallium oxide: A new perspective for power and optoelectronic devices

Photograph of a commercial, 2-inch β-Ga2O3/c-sapphire epiwafer from Nanovation; Evidence of p type Ga2O3: Temperature dependence of the Hall hole concentration, ln(p) versus 1000/T plot leading to a carrier activation energy Ea = 0.56 ± 0.05 eV. Valence band photoemission spectra for the reference Si-doped β -Ga2O3/β -Ga2O3 (n-type) and our β - Ga2O3/c-sapphire (p-type).