Gamma radiation sensing properties of TiO2, ZnO, CuO and CdO thick film pn-junctions

The aim of this work is to investigate the feasibility of the use of titanium dioxide (TiO2), zinc oxide (ZnO), copper oxide (CuO) and Cadmium oxide (CdO) in the development of thick film gamma radiation sensors with instantaneous dosage readouts. A number of pn-heterojunctions with various compositions of sensitive layers were formed by screen printing the thick film pastes on silicon wafers. All these devices were exposed to a disc-type 137Cs source with an activity of 370 kBq. It was found that for all samples the values of leakage current increased with increasing radiation dose.