Bipolar magnetic microsensor for longitudinal and transversal magnetic fields

An integrated magnetic field sensor based on enhanced modulation of emitter injection and carrier deflection is presented. The magnetic sensor structure is composed of two vertical transistors for longitudinal magnetic fields (Bx, By) and a lateral transistor for transversal magnetic fields (Bz). The relative measured magnetosensitivity is in the range of 15-40% T−1, with a good linear dependence between the magnetic field and the output signal and the offset is compensated.