کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9699721 | 1461937 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
SOS and CMOS differential micromagnetodiodes with electrically controlled sensitivity
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Essentially new experimental results of two parallel-field differential micromagnetodiodes based on SOS and CMOS technologies with electrically controlled sensitivity are presented. A dramatic increase of the magnetosensitivity by introduction of discontinuous gates in SOS devices, operating in accumulation condition and by forming of additional n+-p junctions in CMOS ones working with extraction mode are achieved. It is shown that the transducer efficiency increases 4.2 and 11.9 times, respectively, in comparison to sensors without gates and collectors. At low frequencies f â¤Â 1 kHz, the internal noise of two devices is of 1/f type. Parasitic effects at f â¤Â 35 kHz frequencies of alternating magnetic field are not expected.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volumes 123â124, 23 September 2005, Pages 308-312
Journal: Sensors and Actuators A: Physical - Volumes 123â124, 23 September 2005, Pages 308-312
نویسندگان
Ch.S. Roumenin, S.V. Lozanova, D. Nikolov,