Stress-impedance effects in layered FeSiB/Cu/FeSiB films with a meander line structure

Stress-impedance (SI) effects were realized in layered FeSiB/Cu/FeSiB films with a meander line structure by magnetron sputtering on thin glass substrate. The SI effects were studied in the frequency range of 1-40 MHz for the layered FeSiB/Cu/FeSiB films with different film thickness of FeSiB film and Cu layer. Experimental results show that the values of SI ratio increase nearly linear with the deflection of the layered FeSiB/Cu/FeSiB films at high frequencies, and a large negative SI ratio of -18.3% at a frequency of 25 MHz with the deflection of 1000μm is obtained in the layered FeSiB/Cu/FeSiB films with a thicker FeSiB film, which is very attractive for the applications of stress sensors.