کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9834562 | 1524911 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Domain wall confinement with thin film edges
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Magnetization distribution has been calculated for nanocontacts consisting of two films contacted at their edges by means of a micromagnetic framework using the Laudau-Lifshitz-Gilbert formula. Two types of junctions, crossing edges (X-type) and overlapped corner (C-type) of films, are considered. In the X-type configuration, the domain wall between two films having head-to-head or tail-to-tail magnetization direction is confined when the film thickness is lowered to 4Â nm. If the small-size bridge is introduced to the junction area, the wall confinement is slightly enhanced. On the other hand, for the C-type junction the domain wall width decreases with increasing film thickness. These configurations can be potential candidates for the ballistic magnetoresistance sensor which can be manufactured using thin films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 287, February 2005, Pages 392-396
Journal: Journal of Magnetism and Magnetic Materials - Volume 287, February 2005, Pages 392-396
نویسندگان
Masahiko Nawate, Shigeo Honda, Hiroshi Tanaka,