کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9834595 1524912 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Magnetically pinned ring dots for spin valve or magnetic tunnel junction memory cells
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Magnetically pinned ring dots for spin valve or magnetic tunnel junction memory cells
چکیده انگلیسی
Ni-Fe/Mn-Ir asymmetric ring dots with partially planed outer sides are investigated in order to confirm a method for obtaining pinned layers in magnetic memories with asymmetric ring shapes. Magnetic force microscopy revealed that the direction of vortical magnetization is pinned in Ni-Fe/Mn-Ir asymmetric ring dots despite the direction of the magnetic fields. This investigation shows that the Ni-Fe/Mn-Ir asymmetric ring dots can be applied to pinned layers in magnetic memories with asymmetric ring shapes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 286, February 2005, Pages 31-36
نویسندگان
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