کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9834614 | 1524912 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Magneto-current of magnetic tunnel transistors employing various Schottky junctions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Magnetic tunnel transistors were prepared with different Schottky junctions: Pt/n-Si, Au/n-Si and NiFe/n-Si. The magneto-current as well as the collector current was found to depend strongly on the Schottky junction used. The largest collector current was obtained in the NiFe/n-Si junction, which was ten times larger than that of the Au/n-Si junction. The collector current of the Pt/n-Si junction was about one half of that of the Au/n-Si junction. However, in the Pt/n-Si junction that a magneto-current as high as 620%, followed by 530% in the Au/n-Si junction and 200% in the NiFe/n-Si junction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 286, February 2005, Pages 124-127
Journal: Journal of Magnetism and Magnetic Materials - Volume 286, February 2005, Pages 124-127
نویسندگان
T. Hirose, Y. Fujiwara, M. Jimbo, T. Kobayashi, S. Shiomi,