Study on p-type δ-doping GaAs under optical-excitation

The electronic structure in p-type δ-doping GaAs is calculated self-consistently by including the contribution of the photogenerated carrier. The theoretical results indicate that the band bending around the δ-doping region is induced by the injection of photogenerated holes into the potential well of the δ-doping GaAs. Moreover the band bending results in two photogenerated carrier-induced wells for electrons. The potential of the two wells is deepened with the increase of the photogenerated carrier density. The photoluminescence (PL) properties are explained in terms of the dependence of the confined electronic states and the Fermi level of the two-dimensional hole gas (2DHG) on the concentration of photogenerated carrier, which is in good agreement with experimental observation of the variation of peak position and intensity with the excitation light intensity.