کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9868056 | 1530679 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Spin-polarized electron transport through a non-magnetic double barrier semiconductor heterostructure
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Spin-polarized electron transport through a non-magnetic double barrier semiconductor heterostructure Spin-polarized electron transport through a non-magnetic double barrier semiconductor heterostructure](/preview/png/9868056.png)
چکیده انگلیسی
The spin-polarized electron resonant tunneling at zero magnetic field through a double barrier hetero structure of non-magnetic III-V semiconductor is theoretically investigated within the envelop function approximation and the Kane model for the bulk. An elegant model is proposed to study the combined effects of Dresselhaus and in-plane Rashba spin-orbit interactions on the spin-dependent tunneling through double barriers of strained hetero structures. Enhanced degree of spin-polarization and easily tunable wider range of energy for a specific polarization are predicted. We estimate that the polarization can reach cent percent with moderate applied electric field. Our investigations show that spin-relaxation can be suppressed by compensating the bulk and structural inversion symmetries using appropriate electric potential. This effect could be engineered in the fabrication of spin-dependent optoelectronic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 341, Issues 5â6, 27 June 2005, Pages 495-503
Journal: Physics Letters A - Volume 341, Issues 5â6, 27 June 2005, Pages 495-503
نویسندگان
K. Gnanasekar, K. Navaneethakrishnan,