کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9868210 1530683 2005 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The influence of defect on quantum conductivity in three-terminated Y-(or T-)junction single-walled carbon nanotube
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
The influence of defect on quantum conductivity in three-terminated Y-(or T-)junction single-walled carbon nanotube
چکیده انگلیسی
In order to investigate the influence of defect distribution on electronic transport properties of this electronic circuit, we study the quantum conductivity of several three-terminated junctions consisting of three semi-infinite long (5,5) tubes. The calculation results show that the distribution of defects in junction not only affects conductivity values through every branches, but also has shunt effect, that is, when the defects distribution are main partial to one branch, for large bias voltage the quantum conductivity through the corresponding branch will be lower than other branches. Therefore, the defect distribution could play an important role of adjusting the conductivity of each branch in multi-terminated junction. In addition the symmetric Y-junctions still have obvious step-like feature in their quantum conductance, similar to the single (5,5) tube.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 339, Issues 3–5, 23 May 2005, Pages 378-386
نویسندگان
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