کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9868335 | 1530687 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of ordered InN nanowire arrays and their photoluminescence properties
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
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چکیده انگلیسی
Semiconductor InN nanowire arrays were uniformly assembled into the hexagonally ordered nanochannels of anodic alumina membranes (AAM) through the direct reaction of indium and ammonia. The morphology and microstructures of sample were characterized by X-ray diffraction, scan electron microscopy, and transmission electron microscopy. A broad blue-green photoluminescence (PL) band in the wavelength range of 300-650 nm was observed from the InN nanowires assembly system (InN/AAM). A blue shift of the bandgap emission compared with that of bulk InN might be ascribed to the quantum confinement effect size and the interaction between the ordered InN nanowires and AAM.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 337, Issues 1â2, 28 March 2005, Pages 121-126
Journal: Physics Letters A - Volume 337, Issues 1â2, 28 March 2005, Pages 121-126
نویسندگان
Jun Zhang, Baolong Xu, Feihong Jiang, Yongdong Yang, Jianping Li,