کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9875898 1533453 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of oxygen on the track etch rate along light ion trajectories in CR-39
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم تشعشع
پیش نمایش صفحه اول مقاله
Influence of oxygen on the track etch rate along light ion trajectories in CR-39
چکیده انگلیسی
Generally, the absence of dissolved oxygen in the irradiated sample results in a decreased detection sensitivity in comparison with the detection properties and track parameters of samples irradiated in air. To determine the sensitivity the depth dependence of the track etch rate vT(x) along the particle trajectory has been measured. From the observation of the dependence of the decreasing sensitivity on the post-irradiation storage time in vacuum, a lifetime of free radicals of 30 min could be derived. The amount of permanent damages responsible for the etching mechanism is related to the concentration profile of back-diffused oxygen and the REL-dependent radical concentration. This confirms previous results that the detection sensitivity is not a simple function of REL but depends on both REL and x the stronger the deeper within the irradiated sample.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Radiation Measurements - Volume 40, Issues 2–6, November 2005, Pages 234-239
نویسندگان
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