Minimization of specific contact resistance in multiple gate NFETs by selective epitaxial growth of Si in the HDD regions
Keywords: 85.30; 85.40; 89.02; 72.01A; 41.80D; 89.20Fin field-effect transistors (FinFETs); Multiple gate field-effect transistors (MuGFETs); Series resistance; Source/drain (S/D); Heavily doped S/D region (HDD); Silicon-on-insulator (SOI) MOSFET; Selective epitaxi